Professor Chen received a BS degree in Department of Electronics, Peking University in 1988. On a CUSPEA (China-U.S. Physics Examinations and Applications) fellowship, he went to University of Maryland, College Park, USA, in 1988, and obtained his PhD in 1993. From Jan. 1994 to Dec. 1995, he was a Research Engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). In particular, he developed the device technology for monolithic integration of resonant tunneling diodes and HFET's (MISFET and HEMT) on both GaAs and InP substrates, for applications in ultra-high speed signal processing and communication systems. He also developed the enhancement-mode HEMT technology for single polarity voltage supply RF/microwave circuits.
From 1996 to 1998, he was an Assistant Professor in the Department of Electronic Engineering, City University of Hong Kong, carrying out research on high-speed device and circuit simulations. Professor Chen then joined the wireless semiconductor division of Agilent Technologies, Inc. (formerly Hewlett-Packard Co.), Santa Clara, California, in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. His work at Agilent covered RF characterization and modeling of microwave transistors, RF IC and package design. Professor Chen joined HKUST in Nov. 2000.